2N3906_01 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

2N3906
C
BE
TO-92
MMBT3906
C
E
SOT-23
B
Mark: 2A
PZT3906
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
V_CBO
V_EBO
I_C
T_J, T_stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
40
5.0
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2N3906
625
5.0
83.3
200
Max
*MMBT3906
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
**PZT3906
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
 2001 Fairchild Semiconductor Corporation
2N3906/MMBT3906/PZT3906, Rev A