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2N3906TA Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = -1.0mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage IC = -10μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE = -10μA, IC = 0
IBL
Base Cutoff Current
VCE = -30V, VBE = -3.0V
ICEX
Collector Cutoff Current
VCE = -30V, VBE = -3.0V
ON CHARACTERISTICS
hFE
DC Current Gain*
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -0.1mA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
fT
Current Gain - Bandwidth Product
IC = -10mA, VCE = -20V,
f = 100MHz
Cobo
Output Capacitance
VCB = -5.0V, IE = 0,
f = 100kHz
Cibo
Input Capacitance
VEB = -0.5V, IC = 0,
f = 100kHz
NF
Noise Figure
IC = -100μA, VCE = -5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC = -3.0V, VBE = -0.5V
IC = -10mA, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Min.
-40
-40
-5.0
60
80
100
60
30
-0.65
250
Max.
-50
-50
Units
V
V
V
nA
nA
300
-0.25
-0.4
-0.85
-0.95
4.5
10.0
4.0
V
V
V
V
MHz
pF
pF
dB
35
ns
35
ns
225
ns
75
ns
Ordering Information
Part Number
2N3906BU
2N3906TA
2N3906TAR
2N3906TF
2N3906TFR
MMBT3906
PZT3906
Marking
2N3906
2N3906
2N3906
2N3906
2N3906
2A
3906
Package
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-23
SOT-223
Packing Method
BULK
AMMO
AMMO
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
Pack Qty
10000
2000
2000
2000
2000
3000
2500
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
2
www.fairchildsemi.com