2N3906TA Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
October 2011
Features
• This device is designed for general purpose amplifier and switching applications at collector currents of 10μA to 100
mA.
2N3906
EBC
TO-92
MMBT3906
C
SOT-23
Mark:2A
E
B
PZT3906
C
SOT-223
E
C
B
Absolute Maximum Ratings* T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
Collector-Emitter Voltage
-40
V
V_CBO
Collector-Base Voltage
-40
V
V_EBO
Emitter-Base Voltage
-5.0
V
I_C
Collector Current - Continuous
-200
mA
T_J, T_stg Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
2N3906
Max.
*MMBT3906 **PZT3906
Units
P_D
Total Device Dissipation
Derate above 25°C
625
350
1,000
mW
5.0
2.8
8.0
mW/°C
R_θJC
Thermal Resistance, Junction to Case
83.3
°C/W
R_θJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
© 2011 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. B0
1
www.fairchildsemi.com