FAN5059MX Datasheet, PDF (11/18 Pages) Fairchild Semiconductor – High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms

PRODUCT SPECIFICATION
FAN5059
Table 3. FAN5059 Application Bill of Materials for Intel Coppermine/Camino Motherboards
(Typical Design)
Reference Manufacturer Part # Quantity
Description
Requirements/Comments
C1
AVX
TAJB475M010R5
1
4.7µF, 10V Capacitor
C2, C5
Panasonic
ECU-V1C105ZFX
2
1µF, 16V Capacitor
C3-4,C6
Panasonic
ECU-V1H104ZFX
3
100nF, 50V Capacitor
C7-9
Sanyo
6MV1000FA
3
1000µF, 6.3V Electrolytic
C10-12
Any
3
22µF, 6.3V Capacitor
Low ESR
C_IN
Sanyo
10MV1200GX
3
1200µF, 10V Electrolytic I_RMS = 2A
C_OUT
Sanyo
6MV1500GX
12
1500µF, 6.3V Electrolytic ESR ≤ 44mΩ
D1
Motorola
MBRD835L
1
8A Schottky Diode
L1
Any
Optional 2.5µH, 5A Inductor
DCR ~ 10mΩ
See Note 1.
L2
Any
1
1.3µH, 15A Inductor
DCR ~ 3mΩ
Q1
Q2
Q3-5
Fairchild
FDB6030L
Fairchild
FDB7030BL
Fairchild
FDB4030L
1
N-Channel MOSFET
R_DS(ON) = 20mΩ @
V_GS = 4.5V See Note 2.
1
N-Channel MOSFET
R_DS(ON) = 10mΩ @
V_GS = 4.5V See Note 2.
3
N-Channel MOSFET
R1
Any
1
33Ω
R2-3
Any
2
4.7Ω
R4
Any
1
10KΩ
R5, R7
Any
2
6.24KΩ
R6
Any
1
10Ω
R8
N/A
1
3.0mΩ
PCB Trace Resistor
U1
Fairchild
FAN5059M
1
DC/DC Controller
Notes:
1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply
with Intel dI/dt requirements. L1 may be omitted if desired.
2. For 12.5A designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ_SA < 20°C/W should be used. For
designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET
selections, refer to Applications Bulletins AB-8 and AB-15.
REV. 1.0.4 8/14/03
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