RFP12N10L Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

Data Sheet
January 2002
RFP12N10L
12A, 100V, 0.200 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09526.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12N10L
TO-220AB
F12N10L
NOTE: When ordering, include the entire part number.
Features
• 12A, 100V
• r_DS(ON) = 0.200Ω
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
Packaging
G
S
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP12N10L Rev. B