ISL9N322AD3ST Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022 Ω

January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET® Trench MOSFET
30V, 20A, 0.022Ω
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• r_DS(ON) = 0.018Ω (Typ), V_GS = 10V
• r_DS(ON) = 0.028Ω (Typ), V_GS = 4.5V
• Q_g (Typ) = 9nC, V_GS = 5V
• Q_gd (Typ) =3nC
• C_ISS (Typ) =970pF
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252
G
S
MOSFET Maximum Ratings T_A=25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 4.5V)
Continuous (T_C = 25^oC, V_GS = 10V, R_θJA=52^oC)
Pulsed
P_D
Power dissipation
Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature
Ratings
30
±20
20
20
8
Figure 4
50
0.33
-55 to 175
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-252
3
R _{θ JA}
Thermal Resistance Junction to Ambient TO-252
100
R _{θ JA}
Thermal Resistance Junction to Ambient TO-252, 1in² copper pad area
52
Package Marking and Ordering Information
Device Marking
N322AD
Device
ISL9N322AD3ST
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Units
V
V
A
A
A
A
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
Rev.B, January 2002