FDR8308P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

November 1998
FDR8308P
Dual P-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
Features
The SuperSOT-8 family of P-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These P-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been tailored to minimize the on-state resistance and yet
maintain superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
-3.2 A, -20 V. R_DS(ON) = 0.050 Ω @ V_GS = -4.5 V,
R_DS(ON) = 0.070 Ω @ V_GS = -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low
R_DS(ON).
SuperSOT^TM-8 package: small footprint (40% less than
SO-8); low profile(1mmthick); maximum power
comparable to SO-8.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
D2
D2
5
D1
D1
8308P
6
S2
7
G2
pin 1
S1
SuperSOT ^TM-8
G1
8
SOIC-16
4
3
2
1
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Draint Current - Continuous
- Pulsed
(Note 1)
P_D
Maximum Power Dissipation
(Note 1)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDR8308P
-20
±8
-3.2
-20
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
FDR8308P Rev.C