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FDP16AN08A0 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 75V, 58A, 16mΩ | |||
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July 2002
FDP16AN08A0 / FDB16AN08A0
N-Channel PowerTrench® MOSFET
75V, 58A, 16mâ¦
Features
⢠rDS(ON) = 13m⦠(Typ.), VGS = 10V, ID = 58A
⢠Qg(tot) = 28nC (Typ.), VGS = 10V
⢠Low Miller Charge
⢠Low Qrr Body Diode
⢠UIS Capability (Single Pulse and Repetitive Pulse)
⢠Qualified to AEC Q101
Formerly developmental type 82660
Applications
⢠42V Automotive Load Control
⢠Starter / Alternator Systems
⢠Electronic Power Steering Systems
⢠Electronic Valve Train Systems
⢠DC-DC converters and Off-line UPS
⢠Distributed Power Architectures and VRMs
⢠Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
D
G
S
Ratings
75
±20
58
44
9
Figure 4
117
135
0.9
-55 to 175
1.11
62
43
Units
V
V
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive
industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
©2002 Fairchild Semiconductor Corporation
FDP16AN08A0 / FDB16AN08A0 Rev. A1
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