|
FDN306P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET | |||
|
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrenchï MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchildâs advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
⢠Battery management
⢠Load switch
⢠Battery protection
Features
⢠â2.6 A, â12 V.
RDS(ON) = 40 m⦠@ VGS = â4.5 V
RDS(ON) = 50 m⦠@ VGS = â2.5 V
RDS(ON) = 80 m⦠@ VGS = â1.8 V
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
⢠SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
306
FDN306P
7ââ
G
S
Ratings
â12
±8
â2.6
â10
0.5
0.46
â55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
ï2001 Fairchild Semiconductor Corporation
FDN306P Rev D (W)
|
▷ |