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FDMS86500L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60 V, 80 A, 2.5 mΩ | |||
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FDMS86500L
September 2011
N-Channel PowerTrench® MOSFET
60 V, 80 A, 2.5 mΩ
Features
 Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 25 A
 Max rDS(on) = 3.7 mΩ at VGS = 4.5 V, ID = 20 A
 Advanced Package and Silicon combination for low rDS(on)
and high efficiency
 Next generation enhanced body diode technology,
engineered for soft recovery
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
 Primary Switch in isolated DC-DC
 Synchronous Rectifier
 Load Switch
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
DD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
60
±20
80
158
25
180
240
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS86500L
Device
FDMS86500L
Package
Power 56
Reel Size
13 ââ
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS86500L Rev.C1
www.fairchildsemi.com
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