FDMS86102LZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 100 V, 22 A, 25 mΩ

May 2011
FDMS86102LZ
N-Channel Power Trench^® MOSFET
100 V, 22 A, 25 mΩ
Features
General Description
„ Max r_DS(on) = 25 mΩ at V_GS = 10 V, I_D = 7 A
„ Max r_DS(on) = 37 mΩ at V_GS = 4.5 V, I_D = 5.8 A
„ HBM ESD protection level > 6 KV typical (Note 4)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced Power Trench^® process
that has been special tailored to minimize the on-state
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Applications
„ DC - DC Conversion
„ Inverter
„ Synchronous Rectifier
Top
Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
22
37
7
40
84
69
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
50
°C/W
Device Marking
FDMS86102Z
Device
FDMS86102LZ
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
1
FDMS86102LZ Rev.C
www.fairchildsemi.com