FDMC612PZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET

FDMC612PZ
P-Channel PowerTrench^® MOSFET
-20 V, -14 A, 8.4 mΩ
October 2013
Features
General Description
„ Max r_DS(on) = 8.4 mΩ at V_GS = -4.5 V, I_D = -14 A
„ Max r_DS(on) = 13 mΩ at V_GS = -2.5 V, I_D = -11 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Termination is Lead-free and RoHS Compliant
„ HBM ESD capability level > 3.6 KV typical (Note 4)
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been optimized for r_DS(ON), switching performance and
ruggedness.
Applications
„ Battery Management
„ Load Switch
8765
DD D D
S
D
S
D
Pin 1
S
D
1 234
G S S S _{Pin 1}
G
D
Top
Bottom
MLP 3.3x3.3
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-20
±12
-40
-14
-50
38
26
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
4.9
(Note 1a)
53
°C/W
Device Marking
FDMC612PZ
Device
FDMC612PZ
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDMC612PZ Rev.C3
www.fairchildsemi.com