FDD6696 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

December 2002
FDD6696/FDU6696
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor drives
Features
• 50A, 30 V
RDS(ON) = 8.0 mΩ @ VGS = 10 V
RDS(ON) = 10.7 mΩ @ VGS = 4.5 V
• Low gate charge (17nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
Ratings
V DSS
V GSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
30
± 16
50
13
100
52
3.8
1.6
–55 to +175
Thermal Characteristics
RθJ C
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6696
FDD6696
D-PAK (TO-252)
13’’
FDU6696
FDU6696
I-PAK (TO-251)
Tube
2.9
40
96
Tape width
12mm
N/A
Unit
s
V
A
W
°C
°C/W
Quantity
2500 units
75
©2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)