EMP213 Datasheet, PDF (2/4 Pages) Excelics Semiconductor, Inc. – 12.5 - 15.5 GHz Power Amplifier MMIC

UPDATED 05/08/2008
Typical Performance:
1. Small Signal Performance (@7V, 400mA)
EMP213
12.5 – 15.5 GHz Power Amplifier MMIC
20
15
10
5
0
-5
-10
-15
-20
-25
-30
10
EMP213 Small Signal Performance
DB(|S[2,1]|) *
DB(|S[1,1]|) *
DB(|S[2,2]|) *
11
12
13
14
15
16
17
18
Frequency (GHz)
2. OIMD VS Pout @7V 400mA (@15GHz, ∆f=10MHz) 3. P-1 VS VD @Idsq=400mA
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
EMP213 OIMD(dBc) VS Pout(dBm)
5
10
15
20
25
Each Tone Pout (dBm)
IMD3
IMD5
30
29
28
27
26
25
12
P213 P-1(dBm) VS VD @Idsq=400mA
13
14
15
16
17
Frequency (GHz)
VD=8V
VD=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as
copper tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding
325ºC for 20 minutes.
Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as
heatsinking, DC, and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid
accidental discharge through a die.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 2 of 4
Revised May 2008