EMP213 Datasheet, PDF (1/4 Pages) Excelics Semiconductor, Inc. – 12.5 - 15.5 GHz Power Amplifier MMIC

UPDATED 05/08/2008
EMP213
12.5 – 15.5 GHz Power Amplifier MMIC
FEATURES
• 12.5 – 15.5 GHz Operating Frequency Range
• 27.0dBm Output Power at 1dB Compression
• 16.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 17dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2250um X 1130um
Thickness: 85um ± 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=400mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
12.5
15.5
GHz
P1dB
Output Power at 1dB Gain Compression
26.0
27.0
dBm
Gss
OIMD3
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 17dBm
Ids = 60% +10%Idss
14.0
16.0
dB
-41
-38
dBc
Input RL Input Return Loss
-12
-8
dB
Output RL Output Return Loss
-8
-5
dB
NF
Noise Figure
9
dB
Idss
V_DD
Rth
Saturated Drain Current
V_DS =3V, V_GS =0V
475
620
750
mA
Drain Voltage
7
8
V
Thermal Resistance (Au-Sn Eutectic Attach)
22
o_C/W
Tb
Operating Base Plate Temperature
-35
+85
ºC
MAXIMUM RATINGS AT 25°C^1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
Vds
Drain to Source Voltage
12V
V_GS
Gate to Source Voltage
-8V
Ids
Drain Current
Idss
I_GSF
Forward Gate Current
57mA
P_IN
Input Power
24dBm
T_CH
Channel Temperature
175°C
T_STG
Storage Temperature
-65/175°C
P_T
Total Power Dissipation
6.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH –Tb)/R_TH
CONTINUOUS
8V
-4V
650mA
9.5 mA
@ 3dB compression
150°C
-65/150°C
5.2W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
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Revised May 2008