EMP112 Datasheet, PDF (2/3 Pages) Excelics Semiconductor, Inc. – 5.0 - 7.2 GHz Power Amplifier MMIC

UPDATED 02/06/2006
Typical Performance:
1. Small Signal Performance (@7V, 800mA)
EMP112
5.0 – 7.2 GHz Power Amplifier MMIC
EMP112 Small Signal Performance
25
20
15
DB(|S[2,1]|) *
10
DB(|S[1,1]|) *
5
DB(|S[2,2]|) *
0
-5
-10
-15
-20
-25
4
5
6
7
8
9
Frequency (GHz)
2. OIMD VS Pout @7V, 800mA (@8GHz, ∆f=10MHz)
EMP112 OIMD (dBc) vs. Pout(dBm)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
0
OIMD3
OIMD5
5
10
15
20
25
Each Tone Pout (dBm)
3. P-1 VS Vds @Idsq=800mA
EMP112 P1dB(dBm) vs. Vds
33
32
31
30
29
28
27
26
25
4
5
6
7
8
Frequency (GHz)
Vds=8V
Vds=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten
or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes.
Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC,
and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental
discharge through a die.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 2 of 3
Revised February 2006