EMP112 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 5.0 - 7.2 GHz Power Amplifier MMIC

UPDATED 02/06/2006
EMP112
5.0 – 7.2 GHz Power Amplifier MMIC
FEATURES
• 5.0 – 7.2 GHz Operating Frequency Range
• 30.0dBm Output Power at 1dB Compression
• 20.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 20 dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2.65mm x 2.0mm
Thickness: 85um + 15um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 800 mA, Unless Otherwise Specified)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX UNITS
F
Operating Frequency Range
5.0
7.2
GHz
P1dB
Output Power at 1dB Gain Compression
29.0
30.0
dBm
Gss
OIMD3
Input RL
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 20dBm,
7V, 60%+10%Idss
Input Return Loss
17.0
20.0
dB
-41
-38
dBc
-12
-8
dB
Output RL Output Return Loss
-5
dB
Idss
Vds
Saturated Drain Current
Drain to Source Voltage
Vds =3V, V_GS =0V
980
1140 1350
mA
7
8
V
NF
Noise Figure @6GHz
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
8
dB
11
o_C/W
Tb
Operating Base Plate Temperature
MAXIMUM RATINGS AT 25°C^1,2
- 35
+ 85
ºC
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vds
Drain to Source Voltage
12V
8V
V_GS
Gate to Source Voltage
-8V
Ids
Drain Current
Idss
-4V
1300mA
I_GSF
Forward Gate Current
114mA
P_IN
Input Power
27dBm
T_CH
Channel Temperature
175°C
T_STG
Storage Temperature
-65/175°C
P_T
Total Power Dissipation
12.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (T_CH –Tb)/R_TH
19 mA
@ 3dB compression
150°C
-65/150°C
10.4W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 3
Revised February 2006