EFC120B Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

EFC120B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq
GHz
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
12.000
13.000
14.000
15.000
16.000
17.000
18.000
19.000
20.000
21.000
22.000
23.000
24.000
25.000
26.000
S11 S11
Mag Ang
0.970 -47.8
0.928 -83.3
0.899 -108.1
0.884 -125.3
0.876 -138.0
0.868 -147.5
0.871 -155.2
0.866 -161.2
0.868 -166.6
0.871 -171.5
0.874 -176.7
0.878 179.1
0.878 175.3
0.884 172.1
0.885 168.4
0.890 164.3
0.890 160.9
0.895 158.2
0.898 155.5
0.905 152.1
0.911 143.9
0.912 141.1
0.922 139.7
0.919 138.2
0.923 137.3
0.930 135.8
S21
Mag
6.538
5.302
4.250
3.482
2.884
2.462
2.141
1.889
1.681
1.516
1.380
1.263
1.159
1.074
0.992
0.926
0.862
0.807
0.754
0.703
0.647
0.595
0.549
0.505
0.460
0.442
S21
Ang
148.7
125.7
108.6
95.4
84.1
74.5
66.3
58.7
51.6
44.7
38.1
31.7
25.4
19.5
13.5
6.6
0.5
-5.3
-11.4
-17.3
-23.3
-28.0
-33.2
-36.9
-40.3
-44.3
S12
Mag
0.034
0.056
0.067
0.072
0.073
0.073
0.073
0.072
0.070
0.068
0.066
0.064
0.063
0.062
0.060
0.059
0.059
0.059
0.058
0.058
0.056
0.056
0.055
0.054
0.054
0.056
S12
Ang
62.7
44.8
31.7
22.4
15.7
11.0
6.4
3.1
0.3
-2.2
-4.5
-6.4
-8.0
-8.3
-9.9
-11.4
-13.3
-14.0
-14.0
-13.8
-14.3
-13.1
-13.0
-10.6
-6.3
-3.4
S22 S22
Mag Ang
0.293 -35.9
0.284 -63.5
0.281 -83.1
0.290 -95.4
0.296 -107.6
0.323 -114.8
0.354 -119.3
0.384 -123.7
0.415 -127.2
0.445 -130.5
0.475 -134.0
0.507 -137.2
0.532 -140.6
0.561 -144.4
0.581 -148.3
0.599 -152.8
0.621 -158.4
0.644 -163.6
0.662 -168.7
0.676 -173.6
0.699 -172.1
0.713 -177.2
0.748 178.7
0.765 176.4
0.787 173.6
0.799 171.0
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.