EFC120B Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFC120B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +28.0dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN AT 12GHz
• HIGH BVgd FOR 10V BIAS
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 20mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
550
50 156
D
D
48
40
SG
S
GS
350
100
95 50 120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=10V, Ids=50% Idss
f=12GHz
f=18GHz
26.0 28.0
28.0
dBm
G_1dB
Gain at 1dB Compression
Vds=10V, Ids=50% Idss
f=12GHz
f=18GHz
7.5 9.5
7.0
dB
PAE
Power Added Efficiency at 1dB Compression
Vds=10V, Ids=50% Idss
f=12GHz
33
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
160 260 360 mA
Gm
Transconductance
Vds=3V, Vgs=0V
100 140
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=3.0 mA
-2.5 -4.0 V
BVgd
Drain Breakdown Voltage Igd=1.2mA
-15 -20
V
BVgs
Rth
Source Breakdown Voltage Igs=1.2mA
Thermal Resistance (Au-Sn Eutectic Attach)
-10 -17
40
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
285mA
Igsf
Forward Gate Current
30mA
5mA
Pin
Input Power
26dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
3.4W
2.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com