EFA960CR-180F Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

ISSUED 05/11/2006
S-PARAMETERS
VDS = 8 V, IDS ≈ 50% IDSS
FREQ
(GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
--- S11 ---
MAG
ANG
0.976
-158.7
0.971
-176.4
0.948
176.1
0.934
168.5
0.929
162.1
0.908
155.3
0.893
146.5
0.868
134.3
0.847
119.2
0.835
101.9
0.830
84.3
0.823
65.8
0.807
46.7
0.807
21.5
0.824
-7.2
0.851
-33.9
0.882
-54.9
0.901
-74.3
0.890
-88.9
0.893
-104.2
EFA960CR-180F
Low Distortion GaAs Power FET
--- S21 ---
MAG
ANG
5.862
93.1
3.028
77.0
2.702
69.3
2.132
60.0
1.853
51.1
1.736
41.5
1.728
29.7
1.740
14.9
1.751
-2.0
1.735
-20.3
1.700
-38.6
1.661
-57.7
1.632
-77.4
1.603
-100.2
1.473
-124.5
1.259
-147.7
1.047
-167.0
0.876
174.5
0.733
160.0
0.666
144.8
--- S12 ---
MAG
ANG
0.010
22.1
0.012
22.3
0.018
26.4
0.021
27.2
0.025
26.9
0.030
24.1
0.038
18.8
0.047
7.8
0.056
-3.7
0.065
-17.5
0.074
-31.2
0.083
-46.7
0.089
-63.4
0.096
-81.6
0.095
-101.8
0.087
-119.4
0.078
-136.7
0.066
-146.5
0.072
-158.3
0.068
-177.5
--- S22 ---
MAG
ANG
0.822
179.7
0.808
176.5
0.743
169.2
0.733
167.2
0.704
165.4
0.671
163.3
0.626
158.0
0.562
149.5
0.503
136.4
0.453
119.1
0.415
100.0
0.389
79.4
0.391
59.1
0.386
35.4
0.420
7.6
0.481
-17.7
0.574
-36.3
0.660
-47.1
0.659
-54.7
0.673
-64.4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 2 of 2
Revised May 2006