EFA960CR-180F Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

ISSUED 05/11/2006
EFA960CR-180F
Low Distortion GaAs Power FET
FEATURES
• Non-Hermetic 180mil Metal Flange Package
• +36.5 dBm Typical Output Power
• 16.0 dB Typical Power Gain at 2GHz
• 0.5 x 9600 Micron Recessed “Mushroom” Gate
• Si₃N₄ Passivation
• Advanced Epitaxial Heterojunction Profile
Provides High Power Efficiency, Linearity
and Reliability
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
P_1dB
G_1dB
PAE
I_DSS
PARAMETERS/TEST CONDITIONS¹
Output Power at 1dB Compression
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 2GHz
f = 4GHz
Gain at 1dB Compression
f = 2GHz
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 4GHz
Power Added Efficiency at 1dB Compression
V_DS = 8 V, I_DS ≈ 50% I_DSS
f = 2GHz
Saturated Drain Current
V_DS = 3 V, V_GS = 0 V
G_M
Transconductance
V_DS = 3 V, V_GS = 0 V
V_P
Pinch-off Voltage
V_DS = 3 V, I_DS = 28 mA
BV_GD Drain Breakdown Voltage
I_GD = 9.6 mA
BV_GS Source Breakdown Voltage I_GS = 9.6 mA
R_TH
Thermal Resistance
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
43.2 mA
Igsr
Reversed Gate Current
-7.2 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
33 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Caution! ESD sensitive device.
MIN
35.0
14.5
1600
1100
-13
-7
TYP
36.5
36.5
16.0
11.0
34
2720
1450
-2.0
-15
-14
6*
MAX
3520
-3.5
UNITS
dBm
dB
%
mA
mS
V
V
V
o_C/W
CONTINUOUS²
8V
-3V
14.4 mA
-2.4 mA
@ 3dB Compression
175^oC
-65/175^oC
23 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com
page 1 of 2
Revised May 2006