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EFA480C Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET | |||
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EFA480C
DATA SHEET
Low Distortion GaAs Power FET
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
S-PARAMETERS
8V, 1/2 Idss
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
MAG ANG MAG ANG MAG ANG MAG ANG
0.944 -119.8 9.669 115.5 0.023 33.8 0.515 -166.9
0.931 -149.2 5.352 97.6 0.026 24.2 0.553 -172.1
0.928 -161.0 3.646 88.3 0.027 23.1 0.564 -174.0
0.927 -167.6 2.756 81.6 0.027 24.4 0.569 -175.0
0.927 -172.0 2.213 75.9 0.028 26.6 0.574 -175.4
0.927 -175.4 1.849 70.7 0.029 29.2 0.580 -175.7
0.928 -178.1 1.587 66.0 0.030 31.9 0.585 -175.9
0.928 179.6 1.389 61.4 0.031 34.6 0.591 -176.0
0.929 177.5 1.235 57.0 0.032 37.2 0.597 -176.1
0.930 175.6 1.112 52.8 0.034 39.6 0.604 -176.3
0.931 173.9 1.010 48.7 0.035 41.9 0.612 -176.5
0.932 172.3 0.925 44.7 0.037 44.1 0.620 -176.7
0.933 170.7 0.853 40.8 0.039 46.0 0.628 -176.9
0.934 169.2 0.790 37.0 0.040 47.8 0.636 -177.2
0.935 167.7 0.735 33.3 0.042 49.4 0.645 -177.5
0.937 166.3 0.687 29.7 0.044 50.8 0.654 -177.9
0.938 164.9 0.643 26.2 0.047 52.1 0.664 -178.3
0.939 163.6 0.604 22.8 0.049 53.2 0.673 -178.8
0.941 162.3 0.569 19.5 0.051 54.1 0.683 -179.4
0.942 160.9 0.537 16.2 0.054 54.9 0.693 -179.9
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
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