EFA480C Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA480C
DATA SHEET
Low Distortion GaAs Power FET
680
• +34.0dBm TYPICAL OUTPUT POWER
• 18.0dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
104 160
D
D
72
620
LINEARITY AND RELIABILITY
• Idss SORTED IN 80mA PER BIN RANGE
155
75
S
G
S
G
S
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
f= 2GHz
Idss
Saturated Drain Current Vds=3V, Vgs=0V
100 94
120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
MIN
32.0
16.0
800
TYP
34.0
34.0
18.0
12.5
40
1360
MAX UNIT
dBm
dB
%
1760 mA
Gm
Transconductance
Vds=3V, Vgs=0V
560 720
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=10mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
12
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE ¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.2A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
11.4 W
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com