EFA120D Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 09/05/2006
EFA120D
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
Freq
GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
S11
Mag
Ang
0.918 -74.7
0.878 -117.1
0.858 -141.0
0.852 -156.5
0.849 -167.9
0.849 -176.5
0.846 176.6
0.848 170.3
0.848 164.8
0.851 159.9
0.859 154.9
0.860 151.1
0.865 147.4
0.870 144.0
0.869 140.7
0.877 137.8
0.878 134.8
0.876 131.7
0.881 128.4
0.882 124.6
0.872 116.8
0.875 113.1
0.876 110.2
0.878 107.5
0.876 105.0
0.878 103.0
S21
Mag
Ang
9.820 134.4
6.762 108.7
4.898
92.3
3.781
80.0
3.041
69.8
2.558
60.8
2.200
52.9
1.925
45.2
1.720
37.9
1.538
31.0
1.392
23.9
1.261
17.5
1.149
11.3
1.053
5.3
0.962
-0.6
0.893
-6.1
0.823 -11.1
0.766 -16.2
0.719 -21.4
0.671 -26.2
0.662 -33.0
0.618 -37.8
0.574 -41.6
0.524 -45.6
0.482 -48.6
0.442 -51.6
S12
Mag
Ang
0.031 52.7
0.043 33.4
0.046 27.4
0.047 23.7
0.046 21.4
0.047 22.4
0.049 24.8
0.049 23.7
0.049 26.5
0.052 28.2
0.054 30.5
0.056 32.3
0.061 30.9
0.065 33.5
0.068 32.0
0.073 33.3
0.079 32.4
0.085 32.2
0.093 31.5
0.103 30.0
0.116 25.9
0.124 24.2
0.132 22.4
0.141 21.3
0.150 20.4
0.163 17.3
S22
Mag
Ang
0.290 -41.9
0.240 -68.5
0.223 -84.0
0.226 -96.2
0.243 -106.1
0.261 -111.3
0.282 -117.3
0.306 -123.0
0.331 -128.9
0.354 -134.1
0.383 -140.2
0.416 -145.8
0.449 -151.0
0.480 -155.5
0.511 -159.8
0.538 -163.7
0.564 -167.5
0.586 -171.0
0.599 -174.8
0.611 -178.6
0.605 176.8
0.626 172.2
0.637 166.9
0.662 161.9
0.701 156.7
0.714 151.8
Note:
The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 15 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised September 2006