EFA120D Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

UPDATED 09/05/2006
EFA120D
Low Distortion GaAs Power FET
FEATURES
• +28.0dBm TYPICAL OUTPUT POWER
• 19.5dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P_1dB
G_1dB
PAE
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Gain at 1dB Compression
f= 2GHz
Vds=8V, Ids=50% Idss
f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=2GHz
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V,Ids=3.4mA
BVgd
Drain Breakdown Voltage
Igd=1.2mA
BVgs
Source Breakdown Voltage Igs=1.2mA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
Caution! ESD sensitive device.
MIN
TYP
MAX UNIT
26.0
28.0
28.0
18.0
19.5
14.5
dBm
dB
45
%
220
340
440
mA
140
180
mS
-2.0
-3.5
V
-13
-15
V
-7
-14
V
40
45
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS
PARAMETERS
ABSOLUTE¹
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
5.4 mA
Igsr
Reserve Gate Current
0.9 mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
25 dBm
175^oC
-65/175^oC
Pt
Total Power Dissipation
3.3 W
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS²
8V
-4V
1.8 mA
0.3 mA
@ 3dB Compression
175^oC
-65/175^oC
3.3 W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised September 2006