EFA1200A Datasheet, PDF (2/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

EFA1200A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
FREQ
(GHz)
0.500
1.000
1.500
2.000
2.500
3.000
3.500
4.000
4.500
5.000
5.500
6.000
6.500
7.000
7.500
8.000
8.500
9.000
9.500
10.000
S-PARAMETERS
8V, 1/2 Idss
--- S11 ---
--- S21 ---
--- S12 ---
MAG ANG MAG ANG MAG ANG
0.971 -156.3 5.096 98.0 0.012 17.9
0.970 -168.7 2.590 88.2 0.013 17.8
0.970 -173.2 1.732 82.3 0.013 21.4
0.970 -175.7 1.300 77.4 0.013 25.7
0.970 -177.4 1.040 73.0 0.014 30.1
0.970 -178.7 0.867 68.8 0.015 34.3
0.970 -179.8 0.743 64.8 0.015 38.2
0.970 179.3 0.650 60.9 0.016 41.8
0.971 178.5 0.577 57.2 0.017 45.1
0.971 177.8 0.519 53.5 0.018 48.0
0.971 177.1 0.471 50.0 0.019 50.7
0.972 176.4 0.430 46.5 0.020 53.1
0.972 175.8 0.396 43.2 0.021 55.3
0.972 175.1 0.367 39.9 0.023 57.2
0.973 174.5 0.341 36.8 0.024 59.0
0.973 174.0 0.318 33.8 0.025 60.5
0.974 173.4 0.297 30.9 0.027 61.9
0.974 172.8 0.279 28.1 0.028 63.1
0.975 172.2 0.262 25.4 0.029 64.2
0.975 171.7 0.247 22.8 0.031 65.1
--- S22 ---
MAG ANG
0.794 -177.7
0.799 -178.7
0.801 -178.9
0.803 -179.0
0.805 -179.1
0.807 -179.1
0.810 -179.1
0.813 -179.1
0.816 -179.1
0.820 -179.2
0.823 -179.2
0.827 -179.3
0.831 -179.4
0.835 -179.5
0.840 -179.6
0.844 -179.8
0.849 -180.0
0.853 179.8
0.858 179.6
0.863 179.4
Note:
The data included 0.7 mils diameter Au bonding wires:
5 gate wires, 20 mils each; 5 drain wires, 12 mils each; 12 source wires, 7 mils each.