EFA1200A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA1200A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +37.0dBm TYPICAL OUTPUT POWER
• 16.0dB TYPICAL POWER GAIN AT 2GHz
• 0.5 X 12,000 MICRON RECESSED
 

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“MUSHROOM” GATE
• Si₃N₄ PASSIVATION AND PLATED HEAT SINK

• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 200mA PER BIN RANGE
 ⁶ * ⁶ * ⁶ * ⁶ * ⁶ * ^{6 }
  
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
Chip Thickness: 50 ± 10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P_1dB
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
35.5 37.0
37.0
dBm
G_1dB
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f= 2GHz
f= 4GHz
14.5 16.0
11.0
dB
Idss
Saturated Drain Current Vds=3V, Vgs=0V
2000 3400 4400 mA
Gm
Transconductance
Vds=3V, Vgs=0V
1400 1800
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=30mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=12mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=12mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
4
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹
CONTINUOUS²
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
2.0A
Igsf
Forward Gate Current
300mA
50mA
Pin
Input Power
36dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
34 W
28 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com