EMP311 Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – 21.0 - 24.0 GHz Power Amplifier MMIC

ISSUED DATE: 09-10-04
EMP311
21.0 – 24.0 GHz Power Amplifier MMIC
FEATURES
• 21.0 – 24.0 GHz Operating Frequency Range
• 26.5dBm Output Power at 1dB Compression
• 14.0 dB Typical Small Signal Gain
• -40dBc OIMD3 @Each Tone Pout 16.5dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 1130um X 2250um
Thickness: 75um ± 13um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (T_a = 25 °C, 50 ohm, VDD=7V, IDQ=380mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
21.0
24.0 GHz
P1dB Output Power at 1dB Gain Compression
25.0 26.5
dBm
Gss
OIMD3
Input RL
Small Signal Gain
Output 3^rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 16.5dBm
Input Return Loss
11.0 14.0
dB
-40 -37 dBc
-10
-8
dB
Output RL Output Return Loss
-8
-6
dB
Idss
V_DD
Rth
Saturate Drain Current
V_DS =3V, V_GS =0V 429
536
644
mA
Power Supply Voltage
7
8
V
Thermal Resistance (Au-Sn Eutectic Attach)
18
o_C/W
Tb
Operating Base Plate Temperature
-35
+85 ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-4 V
I_DD
Drain Current
Idss
I_GSF
Forward Gate Current
7.5mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
6.3W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH; where T_HS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: [phone] Fax: [phone] Web: www.excelics.com
Revised September 2004