EMP201 Datasheet, PDF (1/3 Pages) Excelics Semiconductor, Inc. – 17.5 - 21.0 GHz Power Ammplifier MMIC

EMP201
17.5 – 21.0 GHz Power Ammplifier MMIC
Issued Date: 12-18-03
FEATURES
• 17.5 – 21.0 GHz Bandwidth
• 24.5dBm Output Power at 1dB Compression
• 18.0 dB Typical Power Gain
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems
Dimension: 2250um X 1000um
ELECTRICAL CHARACTERISTICS (T_a = 25 °C)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN TYP MAX UNITS
F
Operating Frequency Range
P_1dB
Output Power at 1dB Compression
V_DS = 8 V, I_DSQ ≈ 1/2 I_DSS
Gss
Small Signal Gain
IP3
Third Order Interception Point
Input RL Input Return Loss
Output RL Output Return Loss
Idd
Power Supply Current
Vdd
Power Supply Voltage
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
17.5
21.0 GHz
23.5 24.5
dBm
16
18
dB
31
dBm
8
10
dB
6
8
dB
150
210
mA
7
8
V
50
o_C/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2
SYMBOL
CHARACTERISTIC
VALUE
V_DS
Drain to Source Voltage
8V
V_GS
Gate to Source Voltage
-3 V
I_DD
Drain Current
300mA
I_GSF
Forward Gate Current
8mA
P_IN
Input Power
@ 3dB compression
T_CH
Channel Temperature
150°C
T_STG
Storage Temperature
-65/150°C
P_T
Total Power Dissipation
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation V_DS*I_DS < (T_CH –T_HS)/R_TH;
where T_HS = ambient temperature
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: [phone] Fax: [phone] Web: www.excelics.com