EFA024A Datasheet, PDF (1/2 Pages) Excelics Semiconductor, Inc. – Low Distortion GaAs Power FET

Excelics
EFA024A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
• +18.0dBm TYPICAL OUTPUT POWER
• 11.0dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE
• Si₃N₄ PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T_a = 25 ^OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
Output Power at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
G1dB
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
f=18GHz
PAE Power Added efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
NF
Noise Figure Vds=3V,Ids=15mA
f=12GHz
GA
Associated Gain Vds=3V,Ids=15mA f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0mA
BVgd Drain Breakdown Voltage Igd=100uA
BVgs Source Breakdown Voltage Igs=100uA
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
MIN
16
9
35
30
-8
-6
G
G
S
S
S
D
D
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
TYP
18
18
11
9
30
1.6
10
60
40
-2
-12
-11
135
MAX
85
-3.5
UNIT
dBm
dB
%
dB
dB
mA
mS
V
V
V
o_C/W
MAXIMUM RATINGS AT 25^OC
SYMBOLS PARAMETERS
ABSOLUTE¹ CONTINUOUS²
Vds
Drain-Source Voltage
10V
6V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
Idss
Igsf
Forward Gate Current
6mA
1mA
Pin
Input Power
19dBm
Tch
Channel Temperature
175^oC
Tstg
Storage Temperature
-65/175^oC
@ 3dB Compression
150^oC
-65/150^oC
Pt
Total Power Dissipation
1W
830mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com