F0100406B Datasheet, PDF (9/10 Pages) Eudyna Devices Inc – 3.3V 1.25Gbit/s NRZ Receiver Transimpedance Amplifier

F0100406B
3.3V 1.25Gbit/s Transimpedance Amplifier
General Description
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo
current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so
on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the
input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not
always be achieved according to the employed PD and package, the assembling design, and
other technical experts. This is the major reason that there is no product lineup of packaged
transimpedance amplifiers.
Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to
design the input capacitance carefully.
Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an
important point of the design, because very faint photo-current floes into the transimpedance
amplifier. Therefore, in the assembly design of the interconnection between a PD and a
transimpedance, noise should be taken into consideration.
Recommendation
SEI basically recommends The F08 series PD preamplifier modules for customers of the
transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter
circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically
a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series
transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design
issues and to shorten the development lead time.
Noise Performance
F0100406B based on GaAs MES FET’s shows excellent low-noise characteristics compared
with IC’s based on the silicon bipolar process. Many transmission systems often demand
superior signal-to –noise ratio, that is, high sensitivity; F0100406B is the best Choice for such
applications.
The differential circuit configuration in the output enable a complete differential operation to
reduce common mode noise: simple single ended output operation is also available.
Die-Chip Description
F0100406B is shipped like the die-chip described above. The die thickness is typically 280um ±
20um with the available pad size uncovered by a passivation film of 95um square.The material of
the pads is TiW/Pt/Au and the backside is metalized by Ti/Au.