F0100406B Datasheet, PDF (10/10 Pages) Eudyna Devices Inc – 3.3V 1.25Gbit/s NRZ Receiver Transimpedance Amplifier

F0100406B
3.3V 1.25Gbit/s Transimpedance Amplifier
Assembling Condition
SEI recommends the assembling process as shown below and affirms sufficient wire-pull and
die share strength. The heating time of one minute at the temperature of 310°C gave satisfactory
results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the
temperature of 150°C by a ball-bonding machine effective.
Quality Assurance
For the F01 series products, there is only one technically inevitable drawback in terms of quality
assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI
will not ship them if customers do not agree on this point. On the other hand, the lot assurance
test is performed completely without any problems according to SEI’s authorized rules. A
microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7.
Precautions
Owing to their small dimensions, the GaAsFET’s from which the F0100406B is designed are
easily damaged or destroyed if subjected to large transient voltages. Such transients can be
generated by power supplies when switched on if not properly decoupled. It is also possible to
induce spikes from static-electricity-charged operations or ungrounded equipment.