FMM5815X Datasheet, PDF (4/4 Pages) Eudyna Devices Inc – 17.5-20GHz Power Amplifier MMIC

FMM5815X
17.5-20GHz Power Amplifier MMIC
0
2760
2640
2555
VGG1
620 750
VDD1
1155
CHIP OUTLINE
2380
VDD2
3075
3570
2760
2510
1194
RFin
280
205
120
0
0 120
636 750
VDD3
1155
VDD4
VGG2
1380
RFout
2380
Chip Size: 3570µm x 2760µm
Chip Thickness: 70µm
Pad Dimensions: 1. DC Pad: 80µm x 80µm
250
VDD: 100µm x 100µm
2. RF Pad: 120µm x 80µm
0
Unit: µm
3075 3450 3570
VDD5
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0601M200
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