FMM5815X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 17.5-20GHz Power Amplifier MMIC

FEATURES
• High Output Power: P1dB = 31dBm (Typ.)
• High Gain: G1dB = 21dB (Typ.)
• High PAE: η_add = 30% (Typ.)
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5815X is a high-gain, high linearity, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited
for point-to-point communication applications.
FMM5815X
17.5-20GHz Power Amplifier MMIC
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain Voltage
VDD
Gate Voltage
VGG
Input Power
Pin
Storage Temperature
Tstg
Operating Backside Temperature
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4 and -0.39 mA respectively.
3. This product should be hermetically packaged
Rating
10
-3.0
22
-65 to +175
-65 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
17.5 - 20.0
Output Power at 1 dB G.C.P.
P_1dB
29.5 31 -
Unit
GHz
dBm
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
G_1dB
19 21 24
dB
Iddrf
VDD = 6V
IDD = 600mA (Typ.)
- 700 950
mA
η_add
ZS = ZL = 50Ω
- 30 -
%
Input Return Loss
RLin
- -12 -
dB
Output Return Loss
RLout
-
-8
-
dB
3rd Order Intermodulation
Distortion
IM3
∆f=10MHz, 2-Tone Test,
Pout=20dBm S.C.L.
-37.0
-40
-
dBc
Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2: Electrical Characteristic is specified on RF-probe measurements
G.C.P.: Gain Compression Point
S.C.L.: Single Carrier Level
Edition 1.0
June 2001
1