FMM5807X Datasheet, PDF (4/4 Pages) Eudyna Devices Inc – 21-27GHz Power Amplifier MMIC

FMM5807X
21-27GHz Power Amplifier MMIC
2200
2110
2020
0
VDD1
235
620
CHIP OUTLINE
VGG1
VDD2
1290
2225
3450
VDD4
2950 _{Unit: µm}
2200
2015
1330
RFin
1275
RFout
180
185
90
0
0
0 105 265
620
1290
VDD3
VGG2
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
2225
2950
VDD5
3350
3450
Chip Size: 3450±30µm x 2200±30µm
Chip Thickness: 70µm
DC Pad Dimensions: VGG: 80 x 80µm
VDD: 100 x 100µm
RF Pad Dimensions: 120µm x 80µm
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0500M200
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