FMM5807X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 21-27GHz Power Amplifier MMIC

FEATURES
• High Output Power: P1dB = 30dBm (Typ.)
• High Gain: G1dB = 14dB (Typ.)
• High PAE: η_add = 20% (Typ.)
• Wide Frequency Band: 21-27 GHz
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 21-27GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems. This device is well suited
for millimeter wave radio applications.
FMM5807X
21-27GHz Power Amplifier MMIC
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
VDD
VGG
Pin
Tstg
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged.
Rating
10
-3.0
25
-65 to +175
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
21 - 27
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
P_1dB
G_1dB
Iddrf
η_add
RLin
VDD = 6V
f = 21 ~ 27 GHz
*: at f = 21-24 GHz
**: at f = 24-27 GHz
IDD = 650mA (Typ.)
ZS = ZL = 50Ω
27* 29* -
28** 30** -
10 14 19
- 700 950
-
20
-
- -12 -
Unit
GHz
dBm
dB
mA
%
dB
Output Return Loss
RLout
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
- -8
-
dB
G.C.P.: Gain Compression Point
Edition 1.2
January 2001
1