FMM5805X Datasheet, PDF (4/4 Pages) Eudyna Devices Inc – 17.5-20GHz Power Amplifier MMIC

FMM5805X
17.5-20GHz Power Amplifier MMIC
2630
2520
2250
0
VGG1
110
CHIP OUTLINE
VDD1 VGG1
680 710
VDD2
1160
VGG1
2210
VDD4
3360
2940
Unit: µm
2460
2395
1115
RFin
1315
RFout
170
110
0
0 110
235
0
710
VGG2
1160
VDD3
2210
VGG2
2940
VDD5
3470
Chip Size: 3.47±30µm x 2.63±30µm VGG1, VGG2: One bonding is available
Chip Thickness: 70±20µm
Pad Dimensions: 1. DC 80µm x 80µm
2. RF 120µm x 80µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0699M200
4