FMM5805X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 17.5-20GHz Power Amplifier MMIC

FEATURES
• High Output Power: P1dB = 31.0dBm (Typ.)
• High Gain: G1dB = 21.0dB (Typ.)
• High PAE: η_add = 30% (Typ.)
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5805X is a high-gain, high power, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited
for point-to-point communication applications.
FMM5805X
17.5-20GHz Power Amplifier MMIC
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain Voltage
VDD
Gate Voltage
Input Power
VGG
Pin
Storage Temperature
Tstg
Operating Backside Temperature
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged
Rating
10
-3.0
22
-65 to +175
-40 to +85
Unit
V
V
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
17.5 - 20.0
Output Power at 1 dB G.C.P.
P_1dB
29 31 -
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
G_1dB
I_ddrf
η_add
VDD = 6V
IDD = 650mA (Typ.)
ZS = ZL = 50Ω
16 21 26
- 700 950
- 30 -
Input Return Loss
RLi
- -12 -
Unit
GHz
dBm
dB
mA
%
dB
Output Return Loss
RLo
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
-
-8
-
dB
G.C.P.: Gain Compression Point
Edition 1.0
May 2000
1