FHX13X Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – GaAs FET & HEMT Chips

FHX13X, FHX14X
GaAs FET & HEMT Chips
POWER DERATING CURVE
200
150
100
50
00
50 100 150 200
Ambient Temperature (°C)
NF & Gas vs. IDS
3.0 _f=12GHz
14
2.5 ^VDS=2V
13
Gas
2.0
12
1.5
11
1.0
10
0.5
9
NF
10
20
30
Drain Current (mA)
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
20
22
24
NOISE PARAMETERS
VDS=2V, IDS=10mA
Γopt
NFmin
(MAG) (ANG) (dB)
0.92
13 0.28
0.84
25 0.30
0.77
38 0.32
0.71
51 0.34
0.66
65 0.39
0.61
79 0.45
0.58
93 0.56
0.56 108 0.68
0.54 122 0.86
0.52 136 1.03
0.50 150 1.22
0.46 162 1.43
Rn/50
0.65
0.54
0.41
0.31
0.23
0.17
0.12
0.09
0.07
0.07
0.07
0.07
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
40
30
VGS =0V
20
-0.2V
10
-0.4V
-0.6V
0
-0.8V
1
2
3
4
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
20 _f=12GHz
VDS=2V
15 ^IDS=10mA
10
5
0
-10 -5
0
5
10
Input Power (dBm)
Ga (max) & |S21|2 vs. FREQUENCY
25
VDS=2V
IDS=10mA
20
15
Ga (max)
10
|S21|2
5
0
4
6 8 1012 20
Frequency (GHz)
2