FHX13X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – GaAs FET & HEMT Chips

FHX13X, FHX14X
GaAs FET & HEMT Chips
FEATURES
• Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
• High Associated Gain: 13.0dB (Typ.)@f=12GHz
• Lg ≤ 0.15µm, Wg = 200µm
• Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX13X, FHX14X are Super High Electron Mobility Transistor
(SuperHEMT^TM) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-18GHz frequency range. The devices
are well suited for telecommunication, DBS, TVRO, VSAT or other
low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt*
Tstg
Tch
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Rating
3.5
-3.0
180
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
IDSS
gm
Vp
VGSO
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 10mA
VDS = 2V, IDS = 1mA
IGS = -10µA
Min.
10
35
-0.1
-3.0
Noise Figure
NF
-
FHX13X
Associated Gain
Gas ^{VDS = 2V}
11.0
IDS = 10mA
Noise Figure
FHX14X
NF _{f = 12GHz}
-
Associated Gain
Gas
11.0
Limit
Typ. Max.
30 60
50
-
-0.7 -1.5
-
-
0.45 0.50
13.0 ^-
0.55 0.60
13.0 ^-
Thermal Resistance
Rth Channel to Case
- 220 300
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Unit
V
V
mW
°C
°C
Unit
mA
mS
V
V
dB
dB
dB
dB
°C/W
Edition 1.2
July 1999
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