ESN35A090IV Datasheet, PDF (2/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

ES/EGN35A090IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V IDS(DC)=500mA
53
Output Power and Drain Efficiency vs. Input Power
VDS=50V IDS(DC)=500mA f=3.5GHz
53
100
51
51
90
49
47
45
43
41
39
37
35
33
3.35 3.40
Pin=26dBm
Pin=38dBm
49
80
47
70
45
60
43
50
ary _{3.45 3.50 3.55}
in _{Frequency [GHz]}
Pin=30dBm
lim ^Pin=42dBm
3.60 3.65
Pin=34dBm
41
40
39
30
37
20
35
10
33
0
23 25 27 29 31 33 35 37 39 41 43
Input Power [dBm]
re ^{Power Derating Curve}
P ¹⁶⁰
140
120
100
80
60
40
20
0
0
50 100 150 200 250 300
Case Temperature [^oC]
Edition 1.2
Dec. 2005
2