ESN35A090IV Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – High Voltage - High Power GaN-HEMT

Eudyna GaN-HEMT 90W
ES/EGN35A090IV
Preliminary
FEATURES
・High Voltage Operation : VDS=50V
・High Power : 50.0dBm (typ.) @ P3dB
・High Efficiency: 50%(typ.) @ P3dB
・Linear Gain : 12.0dB(typ.) @ f=3.5GHz
・Proven Reliability
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
ry ^Item
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
a _{Total Power Dissipation}
Pt
in ^{Storage Temperature}
Tstg
Channel Temperature
Tch
Condition
Tc=25^oC
Rating
120
-5
150
-65 to +175
250
Unit
V
V
W
o_C
o_C
lim ^{RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC)}
Item
Symbol Condition
Limit
Unit
re ^{DC Input Voltage}
VDS
Forward Gate Current
IGF
P ^{Reverse Gate Current}
IGR
RG=5 Ω
RG=5 Ω
50
V
<TBD
mA
>-7.2
mA
Channel Temperature
Tch
200
o_C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25^oC)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=50V IDS=36mA -1.0
Gate-Drain Breakdown Voltage
VGDO
IGS=- 18mA
-
3dB Gain Compression Power
P3dB
VDS=50V
TBD
Drain Efficiency
ηd
IDS(DC)=500mA
-
Linear Gain
GL
f=3.5GHz
TBD
Thermal Resistance
Rth
Channel to Case
-
Limit
Unit
Typ. Max.
-2.0 -3.5 V
-350 -
V
50.0 - 　 dBm
50
-
%
12.0 -
dB
1.3 1.5 　 ^oC/W
Edition 1.2
Dec. 2005
1