FMM5803X Datasheet, PDF (1/4 Pages) Eudyna Devices Inc – 27.5-31.5GHz Power Amplifier MMIC

FMM5803X
27.5-31.5GHz Power Amplifier MMIC
FEATURES
• High Output Power: P1dB = 30dBm (Typ.)
• High Gain: G1dB = 14dB (Typ.)
• High PAE: η_add = 20% (Typ.)
• Wide Frequency Band: 27.5-31.5 GHz
• Impedance Matched Zin/Zout = 50Ω
• 0.25µm PHEMT Technology
DESCRIPTION
The FMM5803X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 27.5-31.5 GHz
frequency range. This amplifier has an input and output
designed for use in 50Ω systems.This device is well suited for
point-to-point, and point-to-multi-point(LMDS) communication
applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain Voltage
VDD
10
Gate Voltage
VGG
-3.0
Input Power
Pin
25
Storage Temperature
Tstg
-65 to +175
Operating Backside Temperature
Top
-40 to +85
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits
Min. Typ. Max.
Frequency Range
f
27.5 - 31.5
V
V
dBm
°C
°C
Unit
GHz
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current
Power-Added Efficiency
Input Return Loss
P_1dB
G_1dB
I_ddrf
η_add
RLin
VDD = 6V
f = 27.5 ~ 31.5 GHz
*: at f = 27.5-30.0 GHz
**: at f = 30.0-31.5 GHz
IDD = 650mA (Typ.)
ZS = ZL = 50Ω
28 30 -
12* 14* 19*
10** 12** 17**
- 700 950
- 20 -
- -12 -
dBm
dB
mA
%
dB
Output Return Loss
RLout
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
-
-8
-
dB
G.C.P.: Gain Compression Point
Edition 1.1
June 2000
1