EM6AB160TSE-4G Datasheet, PDF (10/62 Pages) Etron Technology, Inc. – 32M x 16 bit DDR Synchronous DRAM

EtronTech
EM6AB160
Table 12. Absolute Maximum Rating
Symbol
Item
Rating
Unit
VIN, VOUT Input, Output Voltage
- 0.5~ VDDQ + 0.5
V
VDD, VDDQ Power Supply Voltage
- 1~3.6
V
TA
Ambient Temperature
0~70
°C
TSTG
Storage Temperature
- 55~150
°C
TSOLDER Soldering Temperature
260
°C
PD
Power Dissipation
1
W
IOS
Short Circuit Output Current
50
mA
Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device.
Note2: These voltages are relative to Vss
Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 °C)
Symbol
Parameter
Min.
Max. Unit
VDD
Power Supply Voltage
2.3
2.7
V
VDDQ Power Supply Voltage (for I/O Buffer)
2.3
2.7
V
VREF
Input Reference Voltage
0.49*VDDQ 0.51* VDDQ V
VIH (DC) Input High Voltage (DC)
VIL (DC) ^{Input Low Voltage (DC)}
VTT
Termination Voltage
VIN (DC) _{Input Voltage Level, CK and CK inputs}
VID (DC) _{Input Different Voltage, CK and CK inputs}
II
Input leakage current
IOZ
Output leakage current
IOH
Output High Current
IOL
Output Low Current
Note : All voltages are referenced to VSS.
VREF + 0.15 VDDQ + 0.3 V
-0.3 VREF – 0.15 V
VREF - 0.04 VREF + 0.04 V
-0.3
VDDQ + 0.3 V
0.36 VDDQ + 0.6 V
-2
-5
-16.2
16.2
2
µA
5
µA
-
mA
-
mA
Note
VOH = 1.95V
VOL = 0.35V
Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C)
Symbol
Parameter
Min.
Max.
Unit
CIN1
Input Capacitance (CK, _CK )
2
3
pF
CIN2
Input Capacitance (All other input-only pins)
2
3
pF
CI/O
DQ, DQS, DM Input/Output Capacitance
4
5
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
Rev.1.3
10
Jun. /2015