EM6AB160TSE-4G Datasheet, PDF (1/62 Pages) Etron Technology, Inc. – 32M x 16 bit DDR Synchronous DRAM

EtronTech
EM6AB160
32M x 16 bit DDR Synchronous DRAM (SDRAM)
Advance (Rev. 1.3, Jun. /2015)
Features
• ^{Fast clock rate: 250/200MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 8M x 16-bit for each bank}
• ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte write mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{8192 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V Ô 0.2V}
• ^{Operating Temperature: T}A ^{= 0~70°C}
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb and Halogen free
• ^{Package: 60-Ball, 8x13x1.2 mm (max) FBGA}
- Pb free and Halogen Free
Overview
The EM6AB160 SDRAM is a high-speed CMOS double
data rate synchronous DRAM containing 512 Mbits. It is
internally configured as a quad 8M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs
occur at both rising edges of CK and _CK . Read and
write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command. The EM6AB160 provides
programmable Read or Write burst lengths of 2, 4, or 8.
An auto precharge function may be enabled to provide
a self-timed row precharge that is initiated at the end of
the burst sequence. The refresh functions, either Auto
or Self Refresh are easy to use. In addition, EM6AB160
features programmable DLL option. By having a
programmable mode register and extended mode
register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
Table 1. Ordering Information
Part Number
Clock Frequency Data Rate
EM6AB160TSE-4G
EM6AB160TSE-5G
250MHz
200MHz
500Mbps/pin
400Mbps/pin
EM6AB160WKE-4H
EM6AB160WKE-5H
250MHz
200MHz
500Mbps/pin
400Mbps/pin
TS : indicates TSOPII package
WK: indicates 8x13x1.2 mm FBGA package
E: indicates Generation Code
G: indicates Pb and Halogen free for TSOPII Package
H: indicates Pb and Halogen free for FBGA Package
Package
TSOPII
TSOPII
FBGA
FBGA
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.