EM6AA160TSA Datasheet, PDF (1/54 Pages) Etron Technology, Inc. – 16M x 16 bit DDR Synchronous DRAM (SDRAM)

EtronTech
EM6AA160TSA
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Confidential
Preliminary (Rev. 1.2 May. / 2009)
Features
• ^{Fast clock rate: 250/200MHz}
• ^{Differential Clock CK &} CK
• ^{Bi-directional DQS}
• ^{DLL enable/disable by EMRS}
• ^{Fully synchronous operation}
• ^{Internal pipeline architecture}
• ^{Four internal banks, 4M x 16-bit for each bank}
• ^{Programmable Mode and Extended Mode registers}
- CAS Latency: 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• ^{Individual byte write mask control}
• ^{DM Write Latency = 0}
• ^{Auto Refresh and Self Refresh}
• ^{8192 refresh cycles / 64ms}
• ^{Precharge & active power down}
• ^{Power supplies: V}DD & ^VDDQ ^{= 2.5V ± 5%}
• ^{Interface: SSTL_2 I/O Interface}
• ^{Package: 66 Pin TSOP II, 0.65mm pin pitch}
- Pb free and Halogen free
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
at both rising edges of CK and CK .d Read and write
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
EM6AA160 provides programmable Read or Write burst
lengths of 2, 4, or 8. An auto precharge function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, EM6AA160 features programmable DLL option.
By having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to high
performance main memory and graphics applications.
Table 1.Ordering Information
Part Number
Clock
Frequency
Data Rate
Package
EM6AA160TSA-4G 250MHz 500Mbps/pin TSOPII
EM6AA160TSA-5G 200MHz 400Mbps/pin TSOPII
TS: indicates TSOP II package
G: indicates Pb free and Halogen free
A: indicates Generation Code
Figure 1. Pin Assignment (Top View)
VDD
1
DQ0
2
VDDQ
3
DQ1
4
DQ2
5
VSSQ
6
DQ3
7
DQ4
8
VDDQ
9
DQ5
10
DQ6
11
VSSQ
12
DQ7
13
NC
14
VDDQ
15
LDQS
16
NC
17
VDD
18
NC
19
LDM
20
WE
21
CAS
22
RAS
23
CS
24
NC
25
BA0
26
BA1
27
A10/AP
28
A0
29
A1
30
A2
31
A3
32
VDD
33
66
VSS
65
DQ15
64
VSSQ
63
DQ14
62
DQ13
61
VDDQ
60
DQ12
59
DQ11
58
VSSQ
57
DQ10
56
DQ9
55
VDDQ
54
DQ8
53
NC
52
VSSQ
51
UDQS
50
NC
49
VREF
48
VSS
47
UDM
46
CK
45
CK
44
CKE
43
NC
42
A12
41
A11
40
A9
39
A8
38
A7
37
A6
36
A5
35
A4
34
VSS
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: [phone] FAX: [phone]
Etron Technology, Inc. reserves the right to change products or specification without notice.