EM6A9325 Datasheet, PDF (1/51 Pages) Etron Technology, Inc. – 4M x 32 Low Power SDRAM (LPSDRAM)

EtronTech
EM6A9325
4M x 32 Low Power SDRAM (LPSDRAM)
Preliminary (Rev 0.4 June/2003)
Features
• Clock rate: 133/125/100 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (1M x 32bit x 4bank)
• Programmable Mode
- CAS# Latency: 1, 2 & 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential & Interleave
- Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• Single 2.5V power supply
• Interface: LVCMOS
•Package : 90 ball-FBGA, 11x13mm, Lead Free
Ordering Information
Part Number
Frequency
EM6A9325BG-7.5G^(*)
133MHz
EM6A9325BG-8G^(*)
125MHz
EM6A9325BG-1H/LG^(*) 100MHz
(*) : G indicates Lead free package
Package
11x13 BGA
11x13 BGA
11x13 BGA
Pin Assignment : Top View
1
2
A
DQ26
B
DQ28
C
VSSQ
D
VSSQ
E
VDDQ
F
VSS
G
A4
H
A7
J
CLK
K
DQM1
L
VDDQ
M
VSSQ
N
VSSQ
P
DQ11
R
DQ13
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
3
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
4
5
6
7
8
9
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
CAS#
VDD
DQ6
DQ1
VDDQ
VDD
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
CS#
WE#
DQ7
DQ5
DQ3
VSSQ
DQ0
DQ21
DQ19
VDDQ
VDD1Q
VSSQ
VDD
A1
A11
RAS#
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.