EM636327 Datasheet, PDF (1/78 Pages) Etron Technology, Inc. – 512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)

EtronTech
EM636327
512K x 32 High Speed Synchronous Graphics DRAM(SGRAM)
Preliminary (12/98)
Features
• Fast access time from clock: 5/5/5.5/6.5/7.5 ns
• Fast clock rate: 183/166/143/125/100 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Dual internal banks(256K x 32-bit x 2-bank)
• Programmable Mode and Special Mode registers
- CAS# Latency: 1, 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst-Read-Single-Write
- Load Color or Mask register
• Burst stop function
• Individual byte controlled by DQM0-3
• Block write and write-per-bit capability
• Auto Refresh and Self Refresh
• 2048 refresh cycles/32ms
• Single +3.3V±0.3V power supply
• Interface: LVTTL
• JEDEC 100-pin Plastic package
-QFP (body thickness=2.8mm)
-TQFP1.4 (body thickness=1.4mm)
-TQFP1.0 (body thickness=1.0mm)
Overview
The EM636327 SGRAM is a high-speed
CMOS synchronous graphics DRAM containing 16
Mbits. It is internally configured as a dual 256K x
32 DRAM with a synchronous interface (all signals
are registered on the positive edge of the clock
signal, CLK). Each of the 256K x 32 bit banks is
organized as 1024 rows by 256 columns by 32 bits.
Read and write accesses to the SGRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in
a programmed sequence. Accesses begin with the
registration of a BankActivate command which is
then followed by a Read or Write command.
The EM636327 provides for programmable
Read or Write burst lengths of 1, 2, 4, 8, or full
Key Specifications
EM636327
- 55/6/7/8/10
tCK3 Clock Cycle time(min.)
5.5/6/7/8/10 ns
tRAS Row Active time(max.)
32/36/42/48/60 ns
tAC1 Access time from Read command 7/8/13/18/23 ns
tAC3 Access time from CLK(max.)
5/5/5.5/6.5/7.5 ns
tRC Row Cycle time(min.)
48/54/63/72/90 ns
Ordering Information
Part Number Frequency Package
EM636327Q-10
100MHz
QFP
EM636327R-10
100MHz QFP (Reverse)
EM636327TQ-10 100MHz
TQFP1.4
EM636327JT-10
100MHz
TQFP1.0
EM636327Q-8
125MHz
QFP
EM636327R-8
125MHz QFP (Reverse)
EM636327TQ-8
125MHz
TQFP1.4
EM636327JT-8
125MHz
TQFP1.0
EM636327Q-7
143MHz
QFP
EM636327TQ-7
143MHz
TQFP1.4
EM636327Q-6
166MHz
QFP
EM636327TQ-6
166MHz
TQFP1.4
EM636327Q-55
183MHz
QFP
EM636327TQ-55 183MHz
TQFP1.4
page, with a burst termination option. An auto
precharge function may be enabled to provide a
self-timed row precharge that is initiated at the end
of the burst sequence. The refresh functions,
either Auto or Self Refresh are easy to use. In
addition, EM636327 features the write-per-bit and
the masked block write functions.
By having a programmable mode register and
special mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications
requiring high memory bandwidth, and when
combined with special graphics functions result in
a device particularly well suited to high
performance graphics applications.
Etron Technology, Inc.
1F, No. 1, Prosperity Rd. 1, Science-Based Industrial Park, Hsinchu, Taiwan, R.O.C
TEL: [phone] FAX: [phone]
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.