MMDL770 Datasheet, PDF (2/3 Pages) E-Tech Electronics LTD – Schottky Barrier Diode

TYPICAL CHARACTERISTICS
MMDL770T1
2.0
MMBD770T1
1.6
f = 1.0 MHz
1.2
0.8
0.4
0
0 5.0 10 15 20 25 30 35 40 45 50
V _R , REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
10
MMBD770T1
1.0
T A = 100°C
T _A = 75°C
0.1
0.01
T A = 25°C
0.001
0
10
20
30
40
50
V _R , REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
500
MMBD770T1
400
KRAKAUER METHOD
300
200
100
0
0
10 20 30 40 50 60 70 80 90 100
I _F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
MMBD770T1
10
T A = 85°C
T _A = –40°C
1.0
T _A = 25°C
0.1
0.2 0.4
0.8
1.2
1.6
2.0
V _F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
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