MMDL770 Datasheet, PDF (1/3 Pages) E-Tech Electronics LTD – Schottky Barrier Diode

Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
• Device Marking: 5H
MMDL770T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
MAXIMUM RATINGS
Symbol
V_R
1
CATHODE
2
ANODE
Rating
Reverse Voltage
Value
70
Unit
Vdc
2
PLASTIC SOD– 323
CASE 477
THERMAL CHARACTERISTICS
Symbol
P_D
R _θJA
T _J , T _stg
Characteristic
Total Device Dissipation FR–5 Board,*
T _A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
Device
MMDL770T1
ORDERING INFORMATION
Package
SOD–323
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I _R = 10 µA)
Diode Capacitance
(V _R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V _R = 35 V)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mA)
V _(BR)R
70
C_T
—
I_R
—
V_F
—
Typ
Max
Unit
—
—
Volts
0.5
1.0
pF
9.0
200
nAdc
0.7
1.0
Vdc
S4–1/3